Passive devices over polycrystalline semiconductor fins
Structures including a passive device and methods of forming such structures. Multiple fins are positioned on a substrate, and an interconnect structure is positioned over the substrate. The fins contain a polycrystalline semiconductor material, and the interconnect structure includes a passive devi...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
21.10.2021
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Subjects | |
Online Access | Get full text |
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Summary: | Structures including a passive device and methods of forming such structures. Multiple fins are positioned on a substrate, and an interconnect structure is positioned over the substrate. The fins contain a polycrystalline semiconductor material, and the interconnect structure includes a passive device that is positioned over the fins. The passive device may be, for example, an inductor or a transmission line. |
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Bibliography: | Application Number: US202016853137 |