Passive devices over polycrystalline semiconductor fins

Structures including a passive device and methods of forming such structures. Multiple fins are positioned on a substrate, and an interconnect structure is positioned over the substrate. The fins contain a polycrystalline semiconductor material, and the interconnect structure includes a passive devi...

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Bibliographic Details
Main Authors Lin, Teng-Yin, Lee, Tung-Hsing, Gu, Man, Zheng, Wang, Wang, Haiting
Format Patent
LanguageEnglish
Published 21.10.2021
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Summary:Structures including a passive device and methods of forming such structures. Multiple fins are positioned on a substrate, and an interconnect structure is positioned over the substrate. The fins contain a polycrystalline semiconductor material, and the interconnect structure includes a passive device that is positioned over the fins. The passive device may be, for example, an inductor or a transmission line.
Bibliography:Application Number: US202016853137