MAGNETIC TUNNEL JUNCTION DEVICE AND METHOD OF FORMING SAME

A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode laye...

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Main Authors Liu, Kuang-I, Lin, Shih-Ho, Wu, Cheng-Yi, Liang, Jinn-Kwei, Shen, Bo-Jhih, Liou, Joung-Wei, Lin, Chin-Hsing, Hsu, Li-Te, Tsai, Han-Ting, Chiu, Yi-Wei
Format Patent
LanguageEnglish
Published 07.10.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.
Bibliography:Application Number: US202117352658