EDGE-TRIMMING METHODS FOR WAFER BONDING AND DICING
A front-side peripheral region of a first wafer may be edge-trimmed by performing a first pre-bonding edge-trimming process. A second wafer to be bonded with the first wafer is provided. Optionally, a front-side peripheral region of the second wafer may be edge-trimmed by performing a second pre-bon...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
30.09.2021
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Subjects | |
Online Access | Get full text |
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Summary: | A front-side peripheral region of a first wafer may be edge-trimmed by performing a first pre-bonding edge-trimming process. A second wafer to be bonded with the first wafer is provided. Optionally, a front-side peripheral region of the second wafer may be edge-trimmed by performing a second pre-bonding edge-trimming process. A front surface of the first wafer is bonded to a front surface of a second wafer to form a bonded assembly. A backside of the first wafer is thinned by performing at least one wafer thinning process. The first wafer and a front-side peripheral region of the second wafer may be edge-trimmed by performing a post-bonding edge-trimming process. The bonded assembly may be subsequently diced into bonded semiconductor chips. |
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Bibliography: | Application Number: US202016835578 |