INVERTED WIDE BASE DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE
A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack, forming a spin conducting layer on the first magnetic tunnel junction stack, and forming a second magnetic tunnel junction stack on the spin conducting...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
16.09.2021
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Subjects | |
Online Access | Get full text |
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Summary: | A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack, forming a spin conducting layer on the first magnetic tunnel junction stack, and forming a second magnetic tunnel junction stack on the spin conducting layer. The second magnetic tunnel junction stack has a width that is greater than a width of the first magnetic tunnel junction stack. |
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Bibliography: | Application Number: US202016817744 |