INVERTED WIDE BASE DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE

A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack, forming a spin conducting layer on the first magnetic tunnel junction stack, and forming a second magnetic tunnel junction stack on the spin conducting...

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Bibliographic Details
Main Authors Sun, Jonathan Zanhong, Doris, Bruce B, Nowak, Janusz Jozef, Hashemi, Pouya
Format Patent
LanguageEnglish
Published 16.09.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack, forming a spin conducting layer on the first magnetic tunnel junction stack, and forming a second magnetic tunnel junction stack on the spin conducting layer. The second magnetic tunnel junction stack has a width that is greater than a width of the first magnetic tunnel junction stack.
Bibliography:Application Number: US202016817744