OXYGEN VACANCY OF AMORPHOUS INDIUM GALLIUM ZINC OXIDE PASSIVATION BY SILICON ION TREATMENT

Methods and apparatus for forming a thin film transistor (TFT) having a metal oxide layer. The method may include forming an amorphous metal oxide layer and treating the metal oxide layer with a silicon containing gas or plasma including Si4+ ions. The silicon treatment of the metal oxide layer help...

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Bibliographic Details
Main Authors Del-Agua-Borniquel, Jose-Ignacio, Van Meer, Hans, Lee, Jae Young, Dekkers, Hendrik F.W
Format Patent
LanguageEnglish
Published 16.09.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods and apparatus for forming a thin film transistor (TFT) having a metal oxide layer. The method may include forming an amorphous metal oxide layer and treating the metal oxide layer with a silicon containing gas or plasma including Si4+ ions. The silicon treatment of the metal oxide layer helps fill the oxygen vacancies in the metal oxide channel layer, leading to a more stable TFT and preventing a negative threshold voltage in the TFT.
Bibliography:Application Number: US202016818963