SEMICONDUCTOR MEMORY DEVICE
According to one embodiment, a semiconductor memory device includes a first conductive layer, and a first structure that extends in a first direction orthogonal to a stacking direction of a stacked body and the stacking direction, and reaches a position deeper than an upper surface of the first cond...
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| Main Authors | , |
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| Format | Patent |
| Language | English |
| Published |
16.09.2021
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| Subjects | |
| Online Access | Get full text |
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| Abstract | According to one embodiment, a semiconductor memory device includes a first conductive layer, and a first structure that extends in a first direction orthogonal to a stacking direction of a stacked body and the stacking direction, and reaches a position deeper than an upper surface of the first conductive layer. The first structure has a first width at a bottom of the stacked body, and a second width narrower than the first width, in a first depth region from a position of the upper surface of the first conductive layer to a first depth position. A third conductive layer is connected to a side surface of the first conductive layer in the first depth region in a second direction orthogonal to the stacking direction and the first direction. |
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| AbstractList | According to one embodiment, a semiconductor memory device includes a first conductive layer, and a first structure that extends in a first direction orthogonal to a stacking direction of a stacked body and the stacking direction, and reaches a position deeper than an upper surface of the first conductive layer. The first structure has a first width at a bottom of the stacked body, and a second width narrower than the first width, in a first depth region from a position of the upper surface of the first conductive layer to a first depth position. A third conductive layer is connected to a side surface of the first conductive layer in the first depth region in a second direction orthogonal to the stacking direction and the first direction. |
| Author | ICHINOSE, Daigo HACHISUGA, Ayaha |
| Author_xml | – fullname: ICHINOSE, Daigo – fullname: HACHISUGA, Ayaha |
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| Notes | Application Number: US202017014733 |
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| RelatedCompanies | Kioxia Corporation |
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| Snippet | According to one embodiment, a semiconductor memory device includes a first conductive layer, and a first structure that extends in a first direction... |
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| SubjectTerms | ELECTRICITY |
| Title | SEMICONDUCTOR MEMORY DEVICE |
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