SEMICONDUCTOR MEMORY DEVICE

According to one embodiment, a semiconductor memory device includes a first conductive layer, and a first structure that extends in a first direction orthogonal to a stacking direction of a stacked body and the stacking direction, and reaches a position deeper than an upper surface of the first cond...

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Bibliographic Details
Main Authors ICHINOSE, Daigo, HACHISUGA, Ayaha
Format Patent
LanguageEnglish
Published 16.09.2021
Subjects
ELECTRICITY
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Summary:According to one embodiment, a semiconductor memory device includes a first conductive layer, and a first structure that extends in a first direction orthogonal to a stacking direction of a stacked body and the stacking direction, and reaches a position deeper than an upper surface of the first conductive layer. The first structure has a first width at a bottom of the stacked body, and a second width narrower than the first width, in a first depth region from a position of the upper surface of the first conductive layer to a first depth position. A third conductive layer is connected to a side surface of the first conductive layer in the first depth region in a second direction orthogonal to the stacking direction and the first direction.
Bibliography:Application Number: US202017014733