MULTI-GATE DEVICE AND METHOD OF FABRICATION THEREOF

A multi-gate semiconductor device is formed that provides a first fin element extending from a substrate. A gate structure extends over a channel region of the first fin element. The channel region of the first fin element includes a plurality of channel semiconductor layers each surrounded by a por...

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Main Authors DIAZ, Carlos H, CHING, Kuo-Cheng, LEUNG, Ying-Keung, TSAI, Ching-Wei, LIEN, Wai-Yi, WANG, Chih-Hao
Format Patent
LanguageEnglish
Published 02.09.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A multi-gate semiconductor device is formed that provides a first fin element extending from a substrate. A gate structure extends over a channel region of the first fin element. The channel region of the first fin element includes a plurality of channel semiconductor layers each surrounded by a portion of the gate structure. A source/drain region of the first fin element is adjacent the gate structure. The source/drain region includes a first semiconductor layer, a dielectric layer over the first semiconductor layer, and a second semiconductor layer over the dielectric layer.
Bibliography:Application Number: US202117302987