Layered Material Laminate Structure and Method for Producing Same

First, in a first step, a semiconductor layer that is constituted by a nitride semiconductor and includes a group V polar surface as a main surface is formed. Next, in a second step, nitrogen atoms at the surface of the semiconductor layer are substituted with a group VI element that is any of oxyge...

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Bibliographic Details
Main Authors Akasaka, Tetsuya, Nishinaka, Junichi, Kumakura, Kazuhide, Onomitsu, Koji, Hiroki, Masanobu
Format Patent
LanguageEnglish
Published 02.09.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:First, in a first step, a semiconductor layer that is constituted by a nitride semiconductor and includes a group V polar surface as a main surface is formed. Next, in a second step, nitrogen atoms at the surface of the semiconductor layer are substituted with a group VI element that is any of oxygen, sulfur, selenium, and tellurium. Next, in a third step, a layered material layer is formed through epitaxial growth of a layered material on the semiconductor layer at which nitrogen atoms are substituted with the group VI element.
Bibliography:Application Number: US201917256941