INTEGRATED CIRCUIT STRUCTURE WITH SEMICONDUCTOR-BASED ISOLATION STRUCTURE AND METHODS TO FORM SAME

Embodiments of the disclosure provide an integrated circuit (IC) structure, including a semiconductor-based isolation structure on a substrate. A shallow trench isolation (STI) structure may be positioned on the semiconductor-based isolation structure. An active semiconductor region is on the substr...

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Bibliographic Details
Main Authors Aldridge, JR., Henry L, Hwang, Jeonghyun, Stamper, Anthony K, Kantarovsky, Johnatan A
Format Patent
LanguageEnglish
Published 26.08.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Embodiments of the disclosure provide an integrated circuit (IC) structure, including a semiconductor-based isolation structure on a substrate. A shallow trench isolation (STI) structure may be positioned on the semiconductor-based isolation structure. An active semiconductor region is on the substrate and adjacent each of the semiconductor-based isolation structure and the STI structure. The active semiconductor region includes a doped semiconductor material. At least one device on the active semiconductor region may be horizontally distal to the STI structure.
Bibliography:Application Number: US202016800011