NOVEL LATTICE MATCHED SEED LAYER TO IMPROVE PMA FOR PERPENDICULAR MAGNETIC PINNING

The invention comprises a novel composite seed layer with lattice-matched crystalline structure so that an excellent epitaxial growth of magnetic pinning layer along its FCC (111) orientation can be achieved, resulting in a significant enhancement of PMA for perpendicular spin-transfer-torque magnet...

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Bibliographic Details
Main Author XIAO, RONGFU
Format Patent
LanguageEnglish
Published 12.08.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INDUCTANCES
MAGNETS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
SEMICONDUCTOR DEVICES
TRANSFORMERS
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Summary:The invention comprises a novel composite seed layer with lattice-matched crystalline structure so that an excellent epitaxial growth of magnetic pinning layer along its FCC (111) orientation can be achieved, resulting in a significant enhancement of PMA for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.
Bibliography:Application Number: US202016786304