NOVEL LATTICE MATCHED SEED LAYER TO IMPROVE PMA FOR PERPENDICULAR MAGNETIC PINNING
The invention comprises a novel composite seed layer with lattice-matched crystalline structure so that an excellent epitaxial growth of magnetic pinning layer along its FCC (111) orientation can be achieved, resulting in a significant enhancement of PMA for perpendicular spin-transfer-torque magnet...
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Main Author | |
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Format | Patent |
Language | English |
Published |
12.08.2021
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Subjects | |
Online Access | Get full text |
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Summary: | The invention comprises a novel composite seed layer with lattice-matched crystalline structure so that an excellent epitaxial growth of magnetic pinning layer along its FCC (111) orientation can be achieved, resulting in a significant enhancement of PMA for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility. |
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Bibliography: | Application Number: US202016786304 |