APPARATUS AND METHOD FOR ETCHING ONE SIDE OF A SEMICONDUCTOR LAYER OF A WORKPIECE

• Main Authors: SCHILLINGER, Kai, MILENKOVIC, Nena, REBER, Stefan, REICHHART, Benjamin
• Format: Patent
• Language: English
• Published: 12.08.2021
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

An apparatus for etching one side of a semiconductor layer of a workpiece, including at least one etching basin for receiving an electrolyte, a first electrode which is provided for electrically contacting the electrolyte located in the etching basin, a second electrode which is provided for electrically contacting the semiconductor layer, a electrical power source which is electrically conductively connected to the first and the second electrodes for generating an etching current, and a transport apparatus for transporting the workpiece relative to the etching basin such that a semiconductor layer etching face to be etched can be wetted by the electrolyte in the etching basin. The transport apparatus has a negative pressure holding element for the workpiece, designed to position the workpiece on a retaining face of the workpiece opposite to the etching face by negative pressure, and the second electrode is positioned on the negative pressure holding element such that, when the workpiece is positioned on the negative pressure holding element, the retaining face of the workpiece is contacted by the second electrode. A method for etching one side of a semiconductor layer of a workpiece is also provided.