POWER AMPLIFIER CIRCUIT AND SEMICONDUCTOR DEVICE

A power amplifier circuit includes a first transistor disposed on a semiconductor substrate; a second transistor disposed on the semiconductor substrate and configured to supply a bias current based on a first current which is a part of a control current to the first transistor; a third transistor d...

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Main Authors SHIKISHIMA, Ryoki, TOKUYA, Hiroaki, SHIMAMOTO, Kenichi, HARIMA, Fumio, SATO, Hideyuki, TANAKA, Satoshi, KUROKAWA, Atsushi, KAWANO, Takayuki
Format Patent
LanguageEnglish
Published 05.08.2021
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Summary:A power amplifier circuit includes a first transistor disposed on a semiconductor substrate; a second transistor disposed on the semiconductor substrate and configured to supply a bias current based on a first current which is a part of a control current to the first transistor; a third transistor disposed on the semiconductor substrate and having a collector configured to be supplied with a second current which is a part of the control current and an emitter configured to output a third current based on the second current; a first bump electrically connected to an emitter of the first transistor and disposed so as to overlap a first disposition area in which the first transistor is disposed in plan view of the semiconductor substrate; and a second bump disposed so as to overlap a second disposition area in which the third transistor is disposed in the plan view.
Bibliography:Application Number: US202117168618