SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

A method for forming a semiconductor structure is provided. The method includes forming a fin structure over a substrate and forming an isolation structure over the substrate. In addition, the fin structure is protruded from the isolation structure. The method further includes trimming the fin struc...

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Bibliographic Details
Main Authors YEO, Yee-Chia, CHANG, Huicheng, LI, Yi-Yun, HUANG, Tsai-Yu
Format Patent
LanguageEnglish
Published 05.08.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for forming a semiconductor structure is provided. The method includes forming a fin structure over a substrate and forming an isolation structure over the substrate. In addition, the fin structure is protruded from the isolation structure. The method further includes trimming the fin structure to a first width and forming a Ge-containing material covering the fin structure. The method further includes annealing the fin structure and the Ge-containing material to form a modified fin structure. The method also includes trimming the modified fin structure to a second width.
Bibliography:Application Number: US202117152448