SYMMETRIC PRECURSOR DELIVERY

• Main Authors: Kumar, Purushottam, Kersten, Jeffrey, Jeon, Eli, LaVoie, Adrien, Dhar, Gautam
• Format: Patent
• Language: English
• Published: 05.08.2021
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A gas delivery system for a processing chamber includes a first channel for delivering a first chemistry and a second channel for delivering a second chemistry. The first channel includes a first outlet valve and the second channel includes a second outlet valve. A trickle gas source is connected to both the first and the second channels. A first junction is coupled to the first outlet valve and a second junction is connected to the second outlet valve. A common conduit connects between the first junction and the second junction. The first junction includes an input to provide a push gas from a push gas source and the second junction includes an output to a processing chamber. During operation, one of the first channel or the second channel is active at one time. A trickle gas from a trickle gas source is flowed into an active one and a non-active one of the first or second channels. A push inert gas from the push gas source is flowed into the first junction, through the common conduit and out of the second junction to the processing chamber.