High Electron Mobility Transistor with Doped Semiconductor Region in Gate Structure

• Main Authors: Haeberlen, Oliver, Prechtl, Gerhard, Detzel, Thomas
• Format: Patent
• Language: English
• Published: 29.07.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A transistor device includes a gate fin that is a segment of a semiconductor body disposed between a pair of gate trenches formed in an upper surface of the semiconductor body, a plurality of two-dimensional charge carrier gas channels disposed at different vertical depths within the gate fin, source and drain contacts arranged on either side of the gate fin in a current flow direction of the gate fin, the source and drain contacts each being electrically connected to each one of the two-dimensional charge carrier gas channels, and a gate structure that is configured to control a conductive connection between the source and drain contacts. The gate structure includes a region of doped type III-nitride semiconductor material that covers the gate fin and extends into the gate trenches, and a conductive gate electrode formed over the region of doped type III-nitride semiconductor material.