LIGHT-EMITTING ELEMENT

The present embodiment relates to a surface emitting type light-emitting element mainly including a nitride semiconductor and a layer for forming a resonance mode. The light-emitting element increases the optical confinement coefficient of a layer forming a resonance mode, includes an active layer,...

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Bibliographic Details
Main Authors AOKI, Yuta, HIROSE, Kazuyoshi, OKAWARA, Satoru
Format Patent
LanguageEnglish
Published 22.07.2021
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:The present embodiment relates to a surface emitting type light-emitting element mainly including a nitride semiconductor and a layer for forming a resonance mode. The light-emitting element increases the optical confinement coefficient of a layer forming a resonance mode, includes an active layer, a phase modulation layer, and one or more high refractive index layers, and further includes, first and second cladding layers sandwiching the active layer, the phase modulation layer, and the high refractive index layer. The phase modulation layer includes a base layer and modified refractive index regions. The gravity centers of the modified refractive index regions are arranged on a straight line passing through each lattice point of a virtual square lattice and tilted with respect to the square lattice. The distance between the gravity center of each modified refractive index region and the lattice point is individually set according to the optical image.
Bibliography:Application Number: US201915734325