Image sensor grid and method of fabrication of same
An image sensor structure includes a semiconductor device, a plurality of image sensing elements formed in the semiconductor substrate, an interconnect structure formed on the semiconductor substrate, and a composite grid structure over the semiconductor substrate. The composite grid structure inclu...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
22.07.2021
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Subjects | |
Online Access | Get full text |
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Summary: | An image sensor structure includes a semiconductor device, a plurality of image sensing elements formed in the semiconductor substrate, an interconnect structure formed on the semiconductor substrate, and a composite grid structure over the semiconductor substrate. The composite grid structure includes a tungsten grid, an oxide grid over the tungsten grid, and an adhesion enhancement grid spacing the tungsten grid from the oxide grid. |
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Bibliography: | Application Number: US202016746720 |