SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

The present disclosure provides a semiconductor device including a recessed access device (RAD) transistor and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate, a gate electrode, and a plurality of impurity regions. The substrate includes a buried lay...

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Bibliographic Details
Main Authors HUANG, CHEN-HSIEN, CHOU, YI-HSIEN
Format Patent
LanguageEnglish
Published 15.07.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present disclosure provides a semiconductor device including a recessed access device (RAD) transistor and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate, a gate electrode, and a plurality of impurity regions. The substrate includes a buried layer. The gate electrode is disposed in the substrate and penetrates through the buried layer. The plurality of impurity regions are disposed in the substrate and on either side of the gate electrode.
Bibliography:Application Number: US202016739922