METHOD FOR SERVERING AN EPITAXIALLY GROWN SEMICONDUCTOR BODY, AND SEMICONDUCTOR CHIP

A method for severing an epitaxially grown semiconductor body is given, in whicha) a growth substrate (2) is provided;b) at least one trench (20) is produced in a first main surface (2a) of the growth substrate (2) by etching;c) a semiconductor material is epitaxially deposited on the first main sur...

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Bibliographic Details
Main Authors NÄHLE, Lars, GERHARD, Sven
Format Patent
LanguageEnglish
Published 15.07.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for severing an epitaxially grown semiconductor body is given, in whicha) a growth substrate (2) is provided;b) at least one trench (20) is produced in a first main surface (2a) of the growth substrate (2) by etching;c) a semiconductor material is epitaxially deposited on the first main surface (2a) and in the trench (20), wherein a semiconductor body (1) is formed, and the semiconductor body at least partially fills the trench (20); andd) the semiconductor body and the growth substrate are cut along the main direction of the trench.Furthermore, a semiconductor chip with a cover surface and side surfaces is specified, in which the side surfaces each have a beveled section that is adjacent to the cover surface and whose surface is created by epitaxy.
Bibliography:Application Number: US201917053697