MAGNETIC JUNCTIONS HAVING ENHANCED TUNNEL MAGNETORESISTANCE AND UTILIZING HEUSLER COMPOUNDS

A method for providing a magnetic device and the magnetic device so provided are described. The magnetic device includes a magnetic layer having a surface. In some aspects, the magnetic layer is a free layer, a reference layer, or a top layer thereof. A tunneling barrier layer is deposited on the ma...

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Bibliographic Details
Main Authors Garg, Chirag, Parkin, Stuart Stephen Papworth, Jeong, Jaewoo, Samant, Mahesh G, Ferrante, Yari, Filippou, Panagiotis Charilaos
Format Patent
LanguageEnglish
Published 10.06.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INDUCTANCES
INFORMATION STORAGE
MAGNETS
PHYSICS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
SEMICONDUCTOR DEVICES
STATIC STORES
TRANSFORMERS
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Summary:A method for providing a magnetic device and the magnetic device so provided are described. The magnetic device includes a magnetic layer having a surface. In some aspects, the magnetic layer is a free layer, a reference layer, or a top layer thereof. A tunneling barrier layer is deposited on the magnetic layer. At least a portion of the tunneling barrier layer adjacent to the magnetic layer is deposited at a deposition angle of at least thirty degrees from a normal to the surface of the magnetic layer. In some aspects, the deposition angle is at least fifty degrees.
Bibliography:Application Number: US202016840179