SEMICONDUCTOR DEVICE

A semiconductor device includes a substrate, a gate structure on the substrate and a first conductive connection group on the gate structure. The gate structure includes a gate spacer and a gate electrode. The first conductive connection group includes a ferroelectric material layer. At least a part...

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Bibliographic Details
Main Authors HA, Dae Won, AN, Guk Il, CHO, Keun Hwi, HA, Seung Seok
Format Patent
LanguageEnglish
Published 03.06.2021
Subjects
ELECTRICITY
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Summary:A semiconductor device includes a substrate, a gate structure on the substrate and a first conductive connection group on the gate structure. The gate structure includes a gate spacer and a gate electrode. The first conductive connection group includes a ferroelectric material layer. At least a part of the ferroelectric material layer is disposed above an upper surface of the gate spacer. And the ferroelectric material layer forms a ferroelectric capacitor having a negative capacitance in the first conductive connection group.
Bibliography:Application Number: US202117176226