EPITAXIAL GROWTH ON A GALLIUM ARSENIDE PHOSPHIDE CAPPED MATERIAL ON A GALLIUM ARSENIDE SUBSTRATE

A semiconductor device fabrication method in which a growing process is followed by a capping process in which a phosphor containing material cap layer is deposited over a final GaAs based layer. The wafer, containing many such substrates, can be removed from the reaction chamber to continue process...

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Bibliographic Details
Main Authors Kapraun, Jonas H, Chang-Hasnain, Constance J, Kolev, Emil, Wang, Jiaxing
Format Patent
LanguageEnglish
Published 27.05.2021
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:A semiconductor device fabrication method in which a growing process is followed by a capping process in which a phosphor containing material cap layer is deposited over a final GaAs based layer. The wafer, containing many such substrates, can be removed from the reaction chamber to continue processing at a later time without creating an oxide layer on the final GaAs based layer. In continuing processing, a decomposition process selectively decomposes the phosphor containing material cap layer, after which a regrowing process is performed to grow additional layers of the device structure. The capping, decomposition and regrowth processes can be repeated multiple times on the semiconductor devices on the wafer during device fabrication.
Bibliography:Application Number: US202017090846