Methods for Manufacturing a MOSFET

• Main Authors: Pippan, Manfred, Stegemann, Maik, Jantscher, Wolfgang, Riegler, Andreas
• Format: Patent
• Language: English
• Published: 20.05.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A MOSFET includes a semiconductor body having a first side, a drift region, a body region forming a first pn-junction with the drift region, a source region forming a second pn-junction with the body region, in a vertical cross-section, a dielectric structure on the first side and having an upper side; a first gate electrode, a second gate electrode, a contact trench between the first and second gate electrodes, extending through the dielectric structure to the source region, in a horizontal direction a width of the contact trench has, in a first plane, a first value, and, in a second plane, a second value which is at most about 2.5 times the first value, and a first contact structure arranged on the dielectric structure having a through contact portion arranged in the contact trench, and in Ohmic contact with the source region.