Integrated Assemblies, and Methods of Forming Integrated Assemblies

Some embodiments include a method of forming an integrated assembly. A first stack is formed over a conductive structure. The first stack includes a second layer between first and third layers. The first and third layers are conductive. A first opening is formed through the first stack. A sacrificia...

Full description

Saved in:
Bibliographic Details
Main Author Haller, Gordon A
Format Patent
LanguageEnglish
Published 20.05.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Some embodiments include a method of forming an integrated assembly. A first stack is formed over a conductive structure. The first stack includes a second layer between first and third layers. The first and third layers are conductive. A first opening is formed through the first stack. A sacrificial material is formed within the first opening. A second stack is formed over the first stack. The second stack has alternating first and second levels. A second opening is formed through the second stack and through the sacrificial material. First semiconductor material is formed within the second opening. A third opening is formed through the second stack, through the third layer, and to the second layer. The second layer is removed, forming a conduit. Second semiconductor material is formed within the conduit. Dopant is out-diffused from the second semiconductor material into the first semiconductor material. Some embodiments include integrated assemblies.
Bibliography:Application Number: US202117160926