SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

A semiconductor device including a gate structure disposed on a substrate is provided. The gate structure includes a work function setting layer and a work function tuning layer sequentially disposed on substrate. The work function tuning layer is in contact with an interface surface positioned betw...

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Bibliographic Details
Main Authors Chui, Chi-On, Ko, Chung-Ting, Wu, Bi-Fen
Format Patent
LanguageEnglish
Published 06.05.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device including a gate structure disposed on a substrate is provided. The gate structure includes a work function setting layer and a work function tuning layer sequentially disposed on substrate. The work function tuning layer is in contact with an interface surface positioned between the work function setting layer and the work function tuning layer, and a material of the interface surface is different from the work function setting layer.
Bibliography:Application Number: US202016735660