SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME

Semiconductor devices and methods of forming the same are provided. The methods may include forming a stacked structure that may include a stacking area and a stepped area and may include first layers and second layers alternately stacked. The second layers may have a stepped shape in the stepped ar...

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Bibliographic Details
Main Authors MIN, CHUNGKI, LIM, JONGHEUN, SEOK, HANSOL, KIM, GIHWAN, HWANG, CHANGSUN
Format Patent
LanguageEnglish
Published 06.05.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Semiconductor devices and methods of forming the same are provided. The methods may include forming a stacked structure that may include a stacking area and a stepped area and may include first layers and second layers alternately stacked. The second layers may have a stepped shape in the stepped area, and the stepped area may include at least one flat area and at least one inclined stepped area. The methods may also include forming a capping insulating layer covering the stacked structure. The capping insulating layer may include a first capping region having a first upper surface and a second capping region having a second upper surface at a lower level than the first upper surface. The methods may further include patterning the capping insulating layer to form protrusions at least one of which overlaps the stepped area and then planarizing the capping insulating layer.
Bibliography:Application Number: US202017035827