METHOD FOR MANUFACTURING SIC EPITAXIAL SUBSTRATE

A SiC varied-growth-rate layer (2) is formed on a SiC bulk substrate (1) while increasing a growth speed from an initial growth speed of 2.0 μm/h or less. A speed change rate of the SiC varied-growth-rate layer (2) is 720 μm/h2 or less. A molar flow ratio of nitrogen to carbon when growth of the SiC...

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Bibliographic Details
Main Author HATAKENAKA, Susumu
Format Patent
LanguageEnglish
Published 29.04.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A SiC varied-growth-rate layer (2) is formed on a SiC bulk substrate (1) while increasing a growth speed from an initial growth speed of 2.0 μm/h or less. A speed change rate of the SiC varied-growth-rate layer (2) is 720 μm/h2 or less. A molar flow ratio of nitrogen to carbon when growth of the SiC varied-growth-rate layer (2) starts is 2.4 or less.
Bibliography:Application Number: US201816963204