PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS

A plasma etching method of an embodiment includes performing etching on a silicon-containing film by using plasma of a fluorocarbon gas. The fluorocarbon gas used in the plasma etching method has a composition, regarding carbon and fluorine, represented by CxFy, wherein x and y are numbers satisfyin...

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Bibliographic Details
Main Authors KUBOI, Shuichi, YOSHINAGA, Seiya
Format Patent
LanguageEnglish
Published 22.04.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A plasma etching method of an embodiment includes performing etching on a silicon-containing film by using plasma of a fluorocarbon gas. The fluorocarbon gas used in the plasma etching method has a composition, regarding carbon and fluorine, represented by CxFy, wherein x and y are numbers satisfying x≥7 and y≥x, and includes a benzene ring structure composed of six carbon atoms.
Bibliography:Application Number: US202017010907