Narrow Semiconductor Mesa Device
First and second trenches are provided in a semiconductor body. A mesa dividing structure is provided between the first and second trenches and comprises non-semiconductor material. A first semiconductor mesa is provided between the first trench and the non-semiconductor material of the mesa dividin...
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Main Author | |
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Format | Patent |
Language | English |
Published |
15.04.2021
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Subjects | |
Online Access | Get full text |
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Summary: | First and second trenches are provided in a semiconductor body. A mesa dividing structure is provided between the first and second trenches and comprises non-semiconductor material. A first semiconductor mesa is provided between the first trench and the non-semiconductor material of the mesa dividing structure. The first semiconductor mesa includes emitter, body and drift regions. The first and second trenches are formed by a masked etching technique with a minimum trench separation distance, and the first semiconductor mesa is provided to have a lateral width that is less than the minimum trench separation distance. |
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Bibliography: | Application Number: US201916653283 |