Narrow Semiconductor Mesa Device

First and second trenches are provided in a semiconductor body. A mesa dividing structure is provided between the first and second trenches and comprises non-semiconductor material. A first semiconductor mesa is provided between the first trench and the non-semiconductor material of the mesa dividin...

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Bibliographic Details
Main Author Karmous, Alim
Format Patent
LanguageEnglish
Published 15.04.2021
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Summary:First and second trenches are provided in a semiconductor body. A mesa dividing structure is provided between the first and second trenches and comprises non-semiconductor material. A first semiconductor mesa is provided between the first trench and the non-semiconductor material of the mesa dividing structure. The first semiconductor mesa includes emitter, body and drift regions. The first and second trenches are formed by a masked etching technique with a minimum trench separation distance, and the first semiconductor mesa is provided to have a lateral width that is less than the minimum trench separation distance.
Bibliography:Application Number: US201916653283