OHMIC ALLOY CONTACT REGION SEALING LAYER

Forming an ohmic contact sealing layer disposed at an intersection between a sidewall of an ohmic contact and a surface of a semiconductor; forming an ohmic contact sealing layer on the intersection between a sidewall of the ohmic contact and the surface of the semiconductor; and subjecting the semi...

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Bibliographic Details
Main Authors Balas, II, Philip C, Duval, Paul J, Alcorn, Paul M, McClymonds, James W, Bettencourt, John P, Davis, Michael S
Format Patent
LanguageEnglish
Published 15.04.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Forming an ohmic contact sealing layer disposed at an intersection between a sidewall of an ohmic contact and a surface of a semiconductor; forming an ohmic contact sealing layer on the intersection between a sidewall of the ohmic contact and the surface of the semiconductor; and subjecting the semiconductor with the ohmic contact to a chemical etchant.
Bibliography:Application Number: US201916599650