DEVICE CRACK-STOP STRUCTURE TO PREVENT DAMAGE DUE TO DICING CRACK

Various embodiments of the present disclosure are directed towards a semiconductor structure including a crack-stop structure disposed within a semiconductor substrate. The semiconductor substrate has a back-side surface and a front-side surface opposite the back-side surface. Photodetectors are dis...

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Bibliographic Details
Main Authors Liu, Jen-Cheng, Wu, Tung-Ting, Wang, Chen-Jong, Kuo, Chin-Chia, Huang, Yimin
Format Patent
LanguageEnglish
Published 01.04.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Various embodiments of the present disclosure are directed towards a semiconductor structure including a crack-stop structure disposed within a semiconductor substrate. The semiconductor substrate has a back-side surface and a front-side surface opposite the back-side surface. Photodetectors are disposed within the semiconductor substrate and are laterally spaced within a device region. An interconnect structure is disposed along the front-side surface. The interconnect structure includes a seal ring structure. A crack-stop structure is disposed within the semiconductor substrate and overlies the seal ring structure. The crack-stop structure continuously extends around the device region.
Bibliography:Application Number: US201916589460