FIELD EFFECT TRANSISTOR HAVING IMPROVED GATE STRUCTURES

A field effect transistor, comprising a gate contact and gate metal forming a vertical structure, such vertical structure having sides and a top surrounded by an air gap formed between a source electrode and a drain electrode of the field effect transistor.

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Bibliographic Details
Main Authors Duval, Paul J, LaRoche, Jeffrey R, Bettencourt, John P, Ip, Kelly P
Format Patent
LanguageEnglish
Published 01.04.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A field effect transistor, comprising a gate contact and gate metal forming a vertical structure, such vertical structure having sides and a top surrounded by an air gap formed between a source electrode and a drain electrode of the field effect transistor.
Bibliography:Application Number: US201916583984