SILICON FILM FORMING METHOD AND SUBSTRATE PROCESSING APPARATUS
There is provided a method of forming a silicon film, which includes: a film forming step of forming the silicon film on a base, the silicon film having a film thickness thicker than a desired film thickness; and an etching step of reducing the film thickness of the silicon film by supplying an etch...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
25.03.2021
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Subjects | |
Online Access | Get full text |
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Summary: | There is provided a method of forming a silicon film, which includes: a film forming step of forming the silicon film on a base, the silicon film having a film thickness thicker than a desired film thickness; and an etching step of reducing the film thickness of the silicon film by supplying an etching gas containing bromine or iodine to the silicon film. |
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Bibliography: | Application Number: US202017111867 |