SEMICONDUCTOR MEMORY DEVICE

A semiconductor memory device includes a first memory cell, a second memory cell above the first memory cell, a first word line electrically connected to a gate of the first memory cell, a second word line electrically connected to a gate of the second memory cell, and a control unit that performs a...

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Main Authors NAKAMURA, Hiroshi, SATO, Atsuhiro, BABA, Yasuyuki, SHIRAKAWA, Masanobu, SHINOHARA, Hiroshi, ABE, Kenichi, FUTATSUYAMA, Takuya, MINAMI, Toshifumi, YONEHAMA, Keisuke
Format Patent
LanguageEnglish
Published 18.03.2021
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Summary:A semiconductor memory device includes a first memory cell, a second memory cell above the first memory cell, a first word line electrically connected to a gate of the first memory cell, a second word line electrically connected to a gate of the second memory cell, and a control unit that performs an erasing operation on the first and second memory cells. During the erasing operation, the control unit applies a first voltage to a first word line and a second voltage higher than the first voltage to a second word line.
Bibliography:Application Number: US202017103504