METHOD AND APPARATUS FOR MANUFACTURING A SEMICONDUCTOR LAYER AND SUBSTRATE PROVIDED THEREWITH
A semiconductor layer and a method and an apparatus for its manufacturing are disclosed. The semiconductor layer includes at least one compound of the formula M1aM21-aN, where M1 is selected from group 13 of the periodic table and M2 is selected from the group comprising scandium, yttrium, erbium, a...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
04.03.2021
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor layer and a method and an apparatus for its manufacturing are disclosed. The semiconductor layer includes at least one compound of the formula M1aM21-aN, where M1 is selected from group 13 of the periodic table and M2 is selected from the group comprising scandium, yttrium, erbium, and europium and where the parameter a is selected between 0.01 and 0.99. The method includes supplying a first precursor into a reaction chamber, the first precursor including at least M2 and being supplied to the reaction chamber at a molar flow rate of at least 1·10−6 mol/min by providing the first precursor by means of a first bubbler from which it is evaporated and supplied to the reaction chamber, the temperature of the first bubbler being more than 90° C. |
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Bibliography: | Application Number: US202017004302 |