Semiconductor Device Including Trench Electrode Structures

A semiconductor device is proposed. The semiconductor device includes a semiconductor body including a first main surface. A plurality of trench electrode structures extend in parallel along a first lateral direction. A first one of the plurality of trench electrode structures includes a gate electr...

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Bibliographic Details
Main Author Karmous, Alim
Format Patent
LanguageEnglish
Published 25.02.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device is proposed. The semiconductor device includes a semiconductor body including a first main surface. A plurality of trench electrode structures extend in parallel along a first lateral direction. A first one of the plurality of trench electrode structures includes a gate electrode. A gate contact is electrically connected to the gate electrode in a gate contact area. The gate contact area is arranged in a first section along the first lateral direction. An isolation structure is arranged between the gate contact and the semiconductor body in the gate contact area. A bottom side of the isolation structure is arranged between a bottom side of the first one of the plurality of trench electrode structures and the first main surface along a vertical direction. The gate contact extends up to or below the first main surface along the vertical direction.
Bibliography:Application Number: US202016991090