METAL-INSULATOR-METAL CAPACITORS WITH HIGH BREAKDOWN VOLTAGE

The present disclosure relates to an apparatus that includes a bottom electrode and a dielectric structure. The dielectric structure includes a first dielectric layer on the bottom electrode and the first dielectric layer has a first thickness. The apparatus also includes a blocking layer on the fir...

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Main Authors Chen, Ying-Hao, Chuang, Chien-Cheng, CHEN, Wei-Ting, Tsai, Tsung-Han, Wang, Po-Jen, Chuang, Kun-Tsang
Format Patent
LanguageEnglish
Published 25.02.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present disclosure relates to an apparatus that includes a bottom electrode and a dielectric structure. The dielectric structure includes a first dielectric layer on the bottom electrode and the first dielectric layer has a first thickness. The apparatus also includes a blocking layer on the first dielectric layer and a second dielectric layer on the blocking layer. The second dielectric layer has a second thickness that is less than the first thickness. The apparatus further includes a top electrode over the dielectric structure.
Bibliography:Application Number: US201916549835