MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

A memory device includes a transistor and a memory cell. The memory cell includes a bottom electrode, a top electrode, and a dielectric structure. The top electrode is electrically connected to the transistor. The dielectric structure includes a thin portion and a thick portion. The thin portion is...

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Bibliographic Details
Main Authors HWU, Jenn-Gwo, CHIANG, Tzu-Hao
Format Patent
LanguageEnglish
Published 25.02.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A memory device includes a transistor and a memory cell. The memory cell includes a bottom electrode, a top electrode, and a dielectric structure. The top electrode is electrically connected to the transistor. The dielectric structure includes a thin portion and a thick portion. The thin portion is sandwiched between the bottom electrode and the top electrode. The thick portion is thicker than the thin portion and between the bottom electrode and the top electrode.
Bibliography:Application Number: US201916549970