DIAMETER EXPANSION OF ALUMINUM NITRIDE CRYSTALS DURING GROWTH BY PHYSICAL VAPOR TRANSPORT
In various embodiments, aluminum nitride single crystals are rapidly diameter-expanded during growth by physical vapor transport. High rates of diameter expansion during growth may be enabled by the use of internal thermal shields and directed plasma-modification of the growth environment to augment...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
18.02.2021
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Subjects | |
Online Access | Get full text |
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Summary: | In various embodiments, aluminum nitride single crystals are rapidly diameter-expanded during growth by physical vapor transport. High rates of diameter expansion during growth may be enabled by the use of internal thermal shields and directed plasma-modification of the growth environment to augment radial thermal gradients and increase radial growth rates. |
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Bibliography: | Application Number: US202016991279 |