MULTILAYER STRUCTURE INSPECTION APPARATUS AND METHOD, AND SEMICONDUCTOR DEVICE FABRICATING METHOD USING THE INSPECTION METHOD

Provided are a multilayer structure inspection apparatus and method of inspecting a multilayer structure in a sample without damaging the sample, the multilayer structure inspection apparatus being configured to measure both of reflectance and dispersion without damaging the sample, wherein the refl...

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Bibliographic Details
Main Authors Yang, Yu-sin, Ryu, Sung-yoon, Jun, Chung-sam, Kwak, Hyun-su, Kim, Jung-won
Format Patent
LanguageEnglish
Published 28.01.2021
Subjects
COLORIMETRY
GAMMA RAY OR X-RAY MICROSCOPES
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
IRRADIATION DEVICES
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT
MEASURING
MEASURING ANGLES
MEASURING AREAS
MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS
NUCLEAR ENGINEERING
NUCLEAR PHYSICS
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PHYSICS
RADIATION PYROMETRY
TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
TESTING
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Summary:Provided are a multilayer structure inspection apparatus and method of inspecting a multilayer structure in a sample without damaging the sample, the multilayer structure inspection apparatus being configured to measure both of reflectance and dispersion without damaging the sample, wherein the reflectance and dispersion are variables which are changed sensitively to a change in a repetitive pattern of the multilayer structure, by measuring values thereof, a structural change of the sample between before and after a process is inspected with high accuracy.
Bibliography:Application Number: US202017036972