COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND METHOD FOR FORMING RESIST PATTERN USING SAME

wherein R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is an -O- group, a -S- group, or a -S-S- group, and Ar is an arylene group.

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Bibliographic Details
Main Authors KISHIOKA, Takahiro, OGATA, Hiroto, TAMURA, Mamoru, USUI, Yuki
Format Patent
LanguageEnglish
Published 28.01.2021
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CINEMATOGRAPHY
COMPOSITIONS BASED THEREON
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
MATERIALS THEREFOR
METALLURGY
ORGANIC MACROMOLECULAR COMPOUNDS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
THEIR PREPARATION OR CHEMICAL WORKING-UP
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Summary:wherein R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is an -O- group, a -S- group, or a -S-S- group, and Ar is an arylene group.
Bibliography:Application Number: US202017070645