SEMICONDUCTOR IMAGE SENSOR

A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of pixel sensors, an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other, a reflective grid disposed over the isolation grid on th...

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Main Authors WANG, CHEN-JONG, HASHIMOTO, KAZUAKI, TSENG, CHIEN-HSIEN, CHOU, KENG-YU, CHIANG, WEIIEH
Format Patent
LanguageEnglish
Published 21.01.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of pixel sensors, an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other, a reflective grid disposed over the isolation grid on the back side of the substrate, an a low-n grid disposed over the back side of the substrate and overlapping the reflective grid from a top view. A width of the low-n grid is greater than a width of the reflective grid.
Bibliography:Application Number: US202017039614