COMPOSITE SUBSTRATE AND LIGHT-EMITTING DIODE

A composite substrate including a substrate, a buffer layer, and a strain release layer. The buffer layer is disposed on the substrate is provided. The strain release layer is disposed on the buffer layer, wherein the buffer layer is between the substrate and the strain release layer. A material of...

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Bibliographic Details
Main Authors Tsai, Chang Da, Huang, Chia-Yen
Format Patent
LanguageEnglish
Published 07.01.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A composite substrate including a substrate, a buffer layer, and a strain release layer. The buffer layer is disposed on the substrate is provided. The strain release layer is disposed on the buffer layer, wherein the buffer layer is between the substrate and the strain release layer. A material of the strain release layer includes Al1-xGaxN, where 0≤x<0.15. The strain release layer is doped with silicon to release a compressive strain due to the buffer layer. A concentration of silicon doped in the strain release layer is greater than 1019 cm−3. A defect density of the strain release layer is less than or equal to 5×109/cm2. A light-emitting diode is also provided.
Bibliography:Application Number: US202017006891