INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE

• Main Authors: LEE, Namhyun, KIM, HOJUN
• Format: Patent
• Language: English
• Published: 31.12.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An integrated circuit semiconductor device including: a multi-bridge channel type transistor in a first region of a substrate, wherein the multi-bridge channel type transistor includes a nanosheet stack structure on the substrate, a first gate dielectric layer on the nanosheet stack structure, and a first gate electrode on the first gate dielectric layer; and a fin-type transistor in a second region of the substrate, wherein the fin-type transistor includes an active fin on the substrate, a second gate dielectric layer on the active fin, and a second gate electrode on the second gate dielectric layer, wherein a width of the nanosheet stack structure is greater than a width of the active fin.