SEMICONDUCTOR STRUCTURE WITH DOPED VIA PLUG

A semiconductor structure is provided. The semiconductor structure includes a gate structure over a fin structure. The semiconductor structure also includes a source/drain structure in the fin structure and adjacent to the gate structure. The semiconductor structure also includes a first contact plu...

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Bibliographic Details
Main Authors HUANG, Jie-Huang, HUANG, Jing-Huei, CHEN, Liang-Yin, HSIEH, Tung-Po, TAN, Lun-Kuang, LIU, Hong-Chih, CHANG, Huicheng, LIU, Su-Hao, CHEN, Kuo-Ju
Format Patent
LanguageEnglish
Published 24.12.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor structure is provided. The semiconductor structure includes a gate structure over a fin structure. The semiconductor structure also includes a source/drain structure in the fin structure and adjacent to the gate structure. The semiconductor structure also includes a first contact plug over the source/drain structure. The semiconductor structure also includes a first via plug over the first contact plug. The semiconductor structure also includes a dielectric layer surrounding the first via plug. The first via plug includes a first group IV element and the dielectric layer includes the first group IV element and a second group IV element.
Bibliography:Application Number: US202017007661