SEMICONDUCTOR DEVICE

A semiconductor device is described that includes a substrate, an active region protruding from the substrate and extending in a first direction, a plurality of channel layers disposed on the active region and spaced apart from each other in a direction perpendicular to an upper surface of the subst...

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Bibliographic Details
Main Authors SUH, DONGCHAN, KIM, UNKI, YI, JIHYE
Format Patent
LanguageEnglish
Published 26.11.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device is described that includes a substrate, an active region protruding from the substrate and extending in a first direction, a plurality of channel layers disposed on the active region and spaced apart from each other in a direction perpendicular to an upper surface of the substrate, an isolation film disposed between a lowermost channel layer of the plurality of channel layers and the active region, a gate electrode surrounding the plurality of channel layers and extending in a second direction intersecting the first direction, and a source/drain region disposed on at least one side of the gate electrode and connected to each of the plurality of channel layers. The isolation film is disposed on a level higher than a bottom surface of the source/drain region.
Bibliography:Application Number: US202016743627