METHOD FOR FORMING AND PATTERNING A LAYER AND/OR SUBSTRATE

In an embodiment, a method for forming features for semiconductor processing. A first mandrel and a second mandrel are formed on a substrate. A first spacer is formed along a first sidewall of the first mandrel, and a second spacer is formed along a second sidewall of the second mandrel. A gap is de...

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Bibliographic Details
Main Authors KOSHIZAWA, Takehito, OSHIO, Hidetaka, SINGH, Tejinder, CHENG, Rui
Format Patent
LanguageEnglish
Published 26.11.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In an embodiment, a method for forming features for semiconductor processing. A first mandrel and a second mandrel are formed on a substrate. A first spacer is formed along a first sidewall of the first mandrel, and a second spacer is formed along a second sidewall of the second mandrel. A gap is defined between the first spacer and the second spacer. The gap is filled by a gap-filling material. In some examples, the gap-filling material includes a doped silicon material. In some examples, the first spacer and the second spacer each include a doped silicon material.
Bibliography:Application Number: US202016853500