METHOD OF PROGRAMMING MULTILEVEL CELL NAND FLASH MEMORY DEVICE AND MLC NAND FLASH MEMORY DEVICE

A method of programming a NAND flash memory device includes: a programming voltage generation circuit applying an initial programming voltage pulse to a predetermined page of NAND flash memory; a controller verifying a plurality of verification levels of the predetermined page, the plurality of veri...

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Bibliographic Details
Main Author Wan, Wei Jun
Format Patent
LanguageEnglish
Published 26.11.2020
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A method of programming a NAND flash memory device includes: a programming voltage generation circuit applying an initial programming voltage pulse to a predetermined page of NAND flash memory; a controller verifying a plurality of verification levels of the predetermined page, the plurality of verification levels being less than a first-state verification voltage of verifying a lowest program state of the predetermined page; the controller determining a magnitude of a subsequent programming voltage pulse upon one of the plurality of verification levels of the predetermined page passing a verification; and the programming voltage generation circuit applying the subsequent programming voltage pulse to the predetermined page.
Bibliography:Application Number: US201916513658