IMAGING DEVICE AND SIGNAL PROCESSING DEVICE

To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first se...

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Main Authors NAKAZAWA, Keiichi, TAKEYA, Yukari, SAKANO, Yorito, OGI, Jun, ZHU, Hongbo, HORIUCHI, Atsushi, TOYOSHIMA, Takahiro, TASHIRO, Yoshiaki, MATSUMOTO, Ryosuke, OIKE, Yusuke, OKUYAMA, Atsushi, MIYOSHI, Yasufumi
Format Patent
LanguageEnglish
Published 19.11.2020
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Abstract To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.
AbstractList To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.
Author OIKE, Yusuke
HORIUCHI, Atsushi
OKUYAMA, Atsushi
SAKANO, Yorito
TOYOSHIMA, Takahiro
ZHU, Hongbo
NAKAZAWA, Keiichi
MIYOSHI, Yasufumi
OGI, Jun
TASHIRO, Yoshiaki
MATSUMOTO, Ryosuke
TAKEYA, Yukari
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– fullname: ZHU, Hongbo
– fullname: HORIUCHI, Atsushi
– fullname: TOYOSHIMA, Takahiro
– fullname: TASHIRO, Yoshiaki
– fullname: MATSUMOTO, Ryosuke
– fullname: OIKE, Yusuke
– fullname: OKUYAMA, Atsushi
– fullname: MIYOSHI, Yasufumi
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Snippet To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
Title IMAGING DEVICE AND SIGNAL PROCESSING DEVICE
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